Click to expand full text
AQV45, AQV454H
8.8 .346
6.4 .252
3.9 .154
8.8 .346
Height includes standoff
CCAAD DDaattaa
6.4 .252
3.6 .142
mm inch
16
25 34
HE 1 Form B (AQV45, AQV454H)(Standard type)
(Standard type)
Normally closed DIP6-pin type
Low on-resistance with 250V/400V load voltage
HE 1 Form B
(AQV45, AQV454H)
FEATURES
1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
NN+
Drain electrode
2.
AQV454 Datasheet
