Datasheet Summary
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Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 100V,ID =57A
RDS(ON) < 14.5mΩ @ VGS=10V
(Typ:12.5mΩ)
Schematic diagram
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
-...
