The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NCE0157A2-VB
NCE0157A2-VB Datasheet
www.VBsemi.com
N-Channel 100-V (D-S) Super Trench Power MOSFET
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () Max. 0.0082 at VGS = 10 V 0.0095 at VGS = 7.5 V 0.0105 at VGS = 6.0 V
ID (A)a 15.5 14.8 14.0
Qg (Typ.) 27.9 nC
FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested
S1 S2 S3 G4
SO-8
Top View
8D 7D 6D 5D
D G
APPLICATIONS
• DC/DC Primary Side Switch • Telecom/Server • Motor Drive Control • Synchronous Rectification
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
15.
NCE0157A2 Datasheet
