NCE0157T Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard Switched and High Frequency Circuits -...