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NCE0160AG - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =60A RDS(ON) < 17mΩ @ VGS=10V (Typ:13.5mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Marking and pin assignment.

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Datasheet preview – NCE0160AG

Datasheet Details

Part number NCE0160AG
Manufacturer NCE Power Semiconductor
File Size 349.01 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0160AG Datasheet
Additional preview pages of the NCE0160AG datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0160AG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =60A RDS(ON) < 17mΩ @ VGS=10V (Typ:13.
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