NCE0160AG
Description
The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS = 100V,ID =60A RDS(ON) < 17mΩ @ VGS=10V (Typ:13.5mΩ) - Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation Marking and pin assignment
