NCE0160S - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

VDS = 100V,ID =60A RDS(ON).

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NCE0160S n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE0160S
Manufacturer	NCE Power Semiconductor
File Size	364.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0160S Datasheet

Full PDF Text Transcription for NCE0160S (Reference)

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http://www.ncepower.com Pb Free Product NCE0160S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0160S uses advanced trench technology and design to provid...

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TION The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES ● VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.

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