NCE0160S - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS = 100V,ID =60A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0160S
Manufacturer	NCE Power Semiconductor
File Size	364.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0160S Datasheet
Additional preview pages of the NCE0160S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0160S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES ● VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.

Published: Jun 6, 2015 |