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NCE1450 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE1450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =140V,ID =50A RDS(ON) < 28mΩ @ VGS=10V (Typ:24.5mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE1450
Manufacturer NCE Power Semiconductor
File Size 351.71 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE1450 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE1450 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =140V,ID =50A RDS(ON) < 28mΩ @ VGS=10V (Typ:24.
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