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NCE15P25J - P-Channel Enhancement Mode Power MOSFET

Description

The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-150V,ID =-25A RDS(ON).

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Datasheet Details

Part number NCE15P25J
Manufacturer NCE Power Semiconductor
File Size 368.97 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE15P25J Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-10V （Typ.
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