NCE15P25JK Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120m R） RDS(ON) <160mΩ @ VGS=-4.5V （Typ.=131m R） - Super high dense cell design - Advanced trench process technology - Reliable and rugged - High density cell design for ultra low On-Resistance Schematic diagram Application - Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500...