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NCE20H11K - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE20H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =110A RDS(ON).

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Datasheet Details

Part number NCE20H11K
Manufacturer NCE Power Semiconductor
File Size 433.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE20H11K Datasheet

Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE20H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.