NCE20H11 - N-Channel 20V MOSFET

VBsemi

Key Features

Trench Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2011/65/EU.

NCE20H11 n-channel 20v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NCE20H11
Manufacturer	VBsemi
File Size	176.84 KB
Description	N-Channel 20V MOSFET
Datasheet	NCE20H11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE20H11-VB NCE20H11-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.004@ VGS = 4.5 V 20 0.005@ VGS = 2.5 V TO-220AB ID (A)a 100 95 FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC D G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C L = 0.