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NCE3055 - NCE N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3055 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other switching application.

VDS =60V,ID =3.0A RDS(ON)

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Datasheet Details

Part number NCE3055
Manufacturer NCE Power Semiconductor
File Size 253.58 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3055 Datasheet

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http://www.ncepower.com Pb Free Product NCE3055 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.