NCE3055 Overview
The NCE3055 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
NCE3055 datasheet by NCE Power Semiconductor.
| Part number | NCE3055 |
|---|---|
| Datasheet | NCE3055-NCEPowerSemiconductor.pdf |
| File Size | 253.58 KB |
| Manufacturer | NCE Power Semiconductor |
| Description | NCE N-Channel Enhancement Mode Power MOSFET |
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The NCE3055 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
View all NCE Power Semiconductor datasheets
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|---|---|
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| NCE3012S | P-Channel Enhancement Mode Power MOSFET |
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