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NCE30H29D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number NCE30H29D
Manufacturer NCE Power Semiconductor
File Size 412.28 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE30H29D-NCEPowerSemiconductor.pdf

General Description

The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =30V ,ID =290A RDS(ON) < 1.8mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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NCE30H29D Distributor