Datasheet Details
| Part number | NCE30H21 |
|---|---|
| Manufacturer | NCEPOWER |
| File Size | 324.15 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE30H21 Datasheet
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General Description
The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized Avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram.