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NCE3010S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number NCE3010S
Manufacturer NCEPOWER
File Size 316.09 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3010S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product http://www.ncepower.com NCE3010S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.