NCE30P50G Description
The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE30P50G Key Features
- VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Battery and loading switching
- Tape width
- Quantity