Datasheet Details
| Part number | NCE30P50G |
|---|---|
| Manufacturer | NCEPOWER |
| File Size | 370.50 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE30P50G Datasheet
|
|
|
General Description
The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram.