• Part: NCE30P12S
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 330.66 KB
NCE30P12S Datasheet (PDF) Download
NCE Power Semiconductor
NCE30P12S

Description

The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V - High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package