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NCE30P15S - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -15A Schematic diagram RDS(ON) < 12mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired Only.
  • Surface mount package.

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Datasheet Details

Part number NCE30P15S
Manufacturer NCE Power Semiconductor
File Size 369.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P15S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A Schematic diagram RDS(ON) < 12mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.