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NCE30P20Q - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram.

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Datasheet Details

Part number NCE30P20Q
Manufacturer NCE Power Semiconductor
File Size 306.24 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P20Q Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● PWM applications ● Load switch ● Power management Marking and pin assignment Package Marking and Ordering Information Device Marking NCE30P20Q Device NCE30P20Q Device Package DFN3.3X3.