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NCE30P28Q - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.

Key Features

  • VDS = -30V,ID = -28A RDS(ON).

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Datasheet Details

Part number NCE30P28Q
Manufacturer NCE Power Semiconductor
File Size 254.60 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P28Q Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features ● VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● Power management ● Load switch Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package NCE30P28Q NCE30P28Q DFN3.3X3.