• Part: NCE3406AN
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 267.74 KB
Download NCE3406AN Datasheet PDF
NCE Power Semiconductor
NCE3406AN
Description The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 30V,ID = 6A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 39mΩ @ VGS=4.5V RDS(ON) < 33mΩ @ VGS=10V Schematic diagram - High power and current handing capability - Lead free product is acquired - Surface mount package Marking and pin assignment - PWM applications - Load switch - Power management SOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 3406AN SOT23-6L Ø180mm 8 mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage ±12 Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and...