NCE4614 - N and P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

N-channel P-channel.
N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V Only Schematic diagram.
P-Channel VDS =-40V,ID = -7A RDS(ON).

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NCE4614 n and p-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE4614
Manufacturer	NCE Power Semiconductor
File Size	483.93 KB
Description	N and P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4614 Datasheet

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http://www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel ● N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V Only Schematic diagram ● P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V Use RDS(ON) < 45mΩ @ VGS=-4.