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NCE4953 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V Only.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Use.

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Datasheet preview – NCE4953

Datasheet Details

Part number NCE4953
Manufacturer NCE Power Semiconductor
File Size 313.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4953 Datasheet
Additional preview pages of the NCE4953 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. D1 D2 G1 G2 S1 S2 Schematic diagram General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.
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