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NCE4953A - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet preview – NCE4953A

Datasheet Details

Part number NCE4953A
Manufacturer NCE Power Semiconductor
File Size 335.39 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4953A Datasheet
Additional preview pages of the NCE4953A datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE4953A NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.
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