NCE55P05S Datasheet | NCE Power Semiconductor

http://.ncepower. NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Only Application - Power switching application - Hard switched and high frequency circuits UseMarking and pin assignment - DC-DC Converter times ng Package Marking and Ordering Information she Device Marking g...