NCE55P05S - P-Channel 60V MOSFET

VBsemi

Key Features

TrenchFET® power MOSFET.
100 % Rg and UIS tested www. VBsemi. com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET.

NCE55P05S p-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NCE55P05S
Manufacturer	VBsemi
File Size	249.62 KB
Description	P-Channel 60V MOSFET
Datasheet	NCE55P05S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE55P05S	P-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE55P04S	P-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE55P15	P-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE55P15K	P-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE55P30	P-Channel Enhancement Mode Power MOSFET	NCE Power

Other Datasheets by VBsemi

Part Number	Description
NCE5015S	N-Channel MOSFET
NCE0103	N-Channel 100V MOSFET
NCE0157A2	N-Channel Power MOSFET
NCE01H16	N-Channel MOSFET
NCE1520	N-Channel 150-V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NCE55P05S-VB NCE55P05S-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063 -8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.