Datasheet Details
| Part number | NCE6012AS |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 405.99 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE6012AS Datasheet
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General Description
The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses Schematic diagram.