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NCE6012AS - N-Channel 60V MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET www. VBsemi. com.

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Datasheet Details

Part number NCE6012AS
Manufacturer VBsemi
File Size 220.78 KB
Description N-Channel 60V MOSFET
Datasheet download datasheet NCE6012AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE6012AS-VB NCE6012AS-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration 60 0.0048 0.006 16 Single FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.