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NCE60P04Y - P-Channel Enhancement Mode Power MOSFET

Description

The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Features

  • VDS =-60V,ID =-4A RDS(ON).

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Datasheet Details

Part number NCE60P04Y
Manufacturer NCE Power Semiconductor
File Size 345.47 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P04Y Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.
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