• Part: NCE60P04Y
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 345.47 KB
NCE60P04Y Datasheet (PDF) Download
NCE Power Semiconductor
NCE60P04Y

Description

The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features - VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation.

Key Features

  • VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation