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NCE60P06S

Manufacturer: NCE Power Semiconductor

NCE60P06S datasheet by NCE Power Semiconductor.

NCE60P06S datasheet preview

NCE60P06S Datasheet Details

Part number	NCE60P06S
Datasheet	NCE60P06S-NCEPowerSemiconductor.pdf
File Size	390.41 KB
Manufacturer	NCE Power Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET

NCE60P06S Overview

The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE60P06S Key Features

VDS =-60V,ID =-6A RDS(ON) <50mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Power switching application
Hard switched and high frequency circuits
DC-DC Converter

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NCE60P06S Distributor