NCE60P06S Datasheet | NCE Power Semiconductor

http://.ncepower. NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-60V,ID =-6A RDS(ON) <50mΩ @ VGS=-10V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Only Application - Power switching application - Hard switched and high frequency circuits Use Marking and pin assignment - DC-DC Converter times heng Package Marking and Ordering Information s Device Marking Device Device Package g NCE60P06S SOP-8 Reel Size Ø330mm Ton...