NCE60P06S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =-60V,ID =-6A RDS(ON).

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NCE60P06S p-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE60P06S
Manufacturer	NCE Power Semiconductor
File Size	390.41 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60P06S Datasheet

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http://www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.