NCE60P25 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - High side switch for full bridge converter - DC/DC converter for LCD display 100% UIS TESTED! 100% ∆Vds TESTED! Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package TO-220-3L Reel Size - Tape width -...