NCE60P10K Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features - VDS =-60V,ID =-10A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Load switch - PWM application Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking NCE60P10K Device NCE60P10K Device Package TO-252-2L Reel Size - Tape width - Quantity -...