NCE60P10K

Manufacturer: NCE Power Semiconductor

NCE60P10K datasheet by NCE Power Semiconductor.

NCE60P10K Datasheet Details

Part number	NCE60P10K
Datasheet	NCE60P10K-NCEPowerSemiconductor.pdf
File Size	420.22 KB
Manufacturer	NCE Power Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET

NCE60P10K Overview

The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

NCE60P10K Key Features

VDS =-60V,ID =-10A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Load switch
PWM application
Tape width
Quantity

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NCE60P10K Datasheet Details

NCE60P10K Overview

NCE60P10K Key Features

More Datasheets from NCE Power Semiconductor

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