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NCE60P10K - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Key Features

  • VDS =-60V,ID =-10A RDS(ON).

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Datasheet Details

Part number NCE60P10K
Manufacturer NCE Power Semiconductor
File Size 420.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P10K Datasheet

Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE60P10K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-10A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.