Datasheet Summary
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant
VDS min@Tjmax RDS(ON)TYP ID Qg
62 mΩ
65 nC
Application
- Power factor correction（PFC）
- Switched mode power...