NCE65TF130D
Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant VDS RDS(ON)TYP ID 650 V 110 mΩ 28 A
