NCE65TF130T
Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant
VDS RDS(ON)TYP ID
650 V 110 mΩ 28 A
Application
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
- LLC Half-bridge
Schematic diagram
- Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
TO-247
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol...
