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NCE7190A - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE7190A N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE7190A

Datasheet Details

Part number	NCE7190A
Manufacturer	NCE Power Semiconductor
File Size	334.39 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE7190A Datasheet
Additional preview pages of the NCE7190A datasheet.

NCE7190A Product details

Description

The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS =71V,ID =90A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Special designed for convertors and power controls.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |