NCE7190 Datasheet | NCE Power

Description The NCE719 0 uses adv anced trenc h techno logy and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - V DS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard switched and High frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking NCE7190 NCE7 Device 190 Device Package TO-220-3L Reel Size Tape width Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter S ymbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) I Pulsed Drain Current Maximum Power Dissipation Limit 71 ±20 90 63 320 170 Unit V V A A A W D (100℃) IDM PD Wuxi NCE Power Semiconductor Co., Ltd Page 1 v 1.1 http://.. Pb Free Product http://.ncepower. Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS 550 1.13 W /℃ m J -55 To 175 ℃ TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 0.88 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Gate resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay...