Part NCE8205E
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 360.82 KB
NCE Power Semiconductor
NCE8205E

Overview

The NCE8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

  • VDS = 20V,ID = 6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment