Datasheet Details
| Part number | NCEAP028N85D |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 851.00 KB |
| Description | Automotive N-Channel Super Trench II Power MOSFET |
| Datasheet |
 NCEAP028N85D Datasheet
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General Description
switching performance.
RDS(ON) and Qg.
Key Features
- VDS =85V,ID =220A RDS(ON)=2.4mΩ , typical @ VGS=10V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 175°C operating temperature.
- Pb-free lead plating.
- 100% UIS tested.
- 100% ΔVds tested.
- AEC-Q101 qualified TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP028N85D NCEAP028N85D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless ot.