NCEP018N85LL Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number	NCEP018N85LL
Manufacturer	NCE Power Semiconductor
File Size	403.39 KB
Description	N-Channel Super Trench II Power MOSFET
Download	NCEP018N85LL Download (PDF)

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET.

VDS =85V,ID =320A RDS(ON)=1.3mΩ , typical @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP018N85LL NCEP018N85LL TOLL Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol D.

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