NCEP018N85LL Overview
Description
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Key Features
- VDS =85V,ID =320A RDS(ON)=1.3mΩ , typical @ VGS=10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature