• Part: NCEP01T18
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 374.26 KB
NCEP01T18 Datasheet (PDF) Download
NCE Power Semiconductor
NCEP01T18

Description

The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =180A RDS(ON) <3.0mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM) Only
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested UseMarking and pin assignment s Application e
  • DC/DC Converter im
  • Ideal for high-frequency switching and synchronous t rectification g 100% UIS TESTED! hen 100% ∆Vds TESTED! gs Package Marking and Ordering Information on Device Marking Device Device Package