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NCEP01T18T Datasheet

Manufacturer: NCE Power Semiconductor
NCEP01T18T datasheet preview

Datasheet Details

Part number NCEP01T18T
Datasheet NCEP01T18T-NCEPowerSemiconductor.pdf
File Size 321.94 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP01T18T page 2 NCEP01T18T page 3

NCEP01T18T Overview

The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP01T18T Key Features

  • VDS =100V,ID =180A RDS(ON) <3.0mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity
NCE Power Semiconductor logo - Manufacturer

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NCEP01T18T Distributor

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