NCEP028N85 Datasheet | NCE Power Semiconductor

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification General Features - VDS =85V,ID =200A RDS(ON)=2.55mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.4mΩ , typical (TO-263)@ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very...