NCEP028N85 Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number	NCEP028N85
Manufacturer	NCE Power Semiconductor
File Size	351.54 KB
Description	N-Channel Super Trench II Power MOSFET
Download	NCEP028N85 Download (PDF)

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET.

VDS =85V,ID =200A RDS(ON)=2.55mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.4mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP028N85 NCEP028N85 TO-220 NCEP028N85D NCEP028N85D TO-263 Reel Size - Tape width.

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