NCEP048NH150T Description
The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
NCEP048NH150T Key Features
- VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- Tape width
- Quantity