NCEP048NH150T - N-Channel Super Trench III Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCEP048NH150T
Manufacturer	NCE Power Semiconductor
File Size	800.40 KB
Description	N-Channel Super Trench III Power MOSFET
Datasheet	NCEP048NH150T Datasheet
Additional preview pages of the NCEP048NH150T datasheet.

Product details

Description

The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-247-3L Schematic Diagram Package Marking and Ordering Information Device Marking Device NCEP048NH150T NCEP048NH150T Device Package TO-247-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwis.

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Published: Oct 25, 2024 |