NCEP10N12 - N-Channel Super Trench II Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCEP10N12
Manufacturer	NCE Power Semiconductor
File Size	413.19 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP10N12 Datasheet
Additional preview pages of the NCEP10N12 datasheet.

Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP10N12 NCEP10N12 TO-220 NCEP10N12D NCEP10N12D TO-263 Reel Size - Tape width -.

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Published: Feb 13, 2025 |