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NCEP1260F - N-Channel Super Trench Power MOSFET

Description

The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet preview – NCEP1260F

Datasheet Details

Part number NCEP1260F
Manufacturer NCE Power Semiconductor
File Size 387.94 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP1260F Datasheet
Additional preview pages of the NCEP1260F datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP1260F NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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