NCEP1260F Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220F top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width TO-220F -...