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NCEP40P60Q Datasheet P-Channel Super Trench Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number	NCEP40P60Q
Manufacturer	NCE Power Semiconductor
File Size	0.99 MB
Description	P-Channel Super Trench Power MOSFET
Datasheet	NCEP40P60Q Datasheet

General Description

The NCEP40P60Q uses Super Trench technology that is General

Overview

NCEP40P60Q NCE P-Channel Super Trench Power MOSFET.

Key Features

uniquely optimized to provide the most efficient high frequency.
VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching.
Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
Very low on-resistance RDS(on).

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