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NCEP40P60Q - P-Channel Super Trench Power MOSFET

Description

The NCEP40P60Q uses Super Trench technology that is General

Features

  • uniquely optimized to provide the most efficient high frequency.
  • VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching.
  • Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
  • Very low on-resistance RDS(on).

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Datasheet Details

Part number NCEP40P60Q
Manufacturer NCE Power Semiconductor
File Size 0.99 MB
Description P-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40P60Q Datasheet
Additional preview pages of the NCEP40P60Q datasheet.

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NCEP40P60Q NCE P-Channel Super Trench Power MOSFET Description The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency ● VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching ● Excellent gate charge x RDS(on) product(FOM) and synchronous rectification ● Very low on-resistance RDS(on) Application ● DC/DC Converter ● Ideal for high-frequency rectification switching and synchronous ● 150 °C operating temperature ● Pb-free lead plating ly 100% UIS TESTED! On100% ΔVds TESTED! DFN 3.
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