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NCEP40P80G - P-Channel Super Trench Power MOSFET

Description

The NCEP40P80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP40P80G NCEP40P80G DFN5X6-8L - - Absolute Maximum Ratin.

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Datasheet Details

Part number NCEP40P80G
Manufacturer NCE Power Semiconductor
File Size 335.81 KB
Description P-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40P80G Datasheet
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http://www.ncepower.com NCEP40P80G NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.
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