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NCEP85T12 Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number NCEP85T12
Manufacturer NCE Power Semiconductor
File Size 309.18 KB
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP85T12-NCEPowerSemiconductor.pdf

NCEP85T12 Overview

The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP85T12 Key Features

  • VDS =85V,ID =120A RDS(ON) <5.3mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity

NCEP85T12 Distributor