• Part: NCEP85T12
  • Manufacturer: NCE Power Semiconductor
  • Size: 309.18 KB
Download NCEP85T12 Datasheet PDF
NCEP85T12 datasheet preview
NCEP85T12 page 2
Page 2
NCEP85T12 page 3
Page 3

NCEP85T12 Key Features

  • VDS =85V,ID =120A RDS(ON) <5.3mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity

Related NCE Power Semiconductor Datasheets

Part Number Description
NCEP85T12D N-Channel Super Trench Power MOSFET
NCEP85T11 N-Channel Super Trench Power MOSFET
NCEP85T14 N-Channel Super Trench Power MOSFET
NCEP85T14WD N-Channel Super Trench Power MOSFET
NCEP85T15 N-Channel Super Trench Power MOSFET

NCEP85T12 Description

The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.