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NCEP85T12D Datasheet

N-channel Super Trench Power MOSFET

Manufacturer: NCE Power Semiconductor

NCEP85T12D Overview

The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP85T12D Key Features

  • VDS =85V,ID =120A RDS(ON) <5.5mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

NCEP85T12D Distributor